Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodes
- Authors
- Ardhi, Ryanda Enggar Anugrah; Guicheng, Liu; Park, Jihun; Lee, Joong Kee
- Issue Date
- 2023-01
- Publisher
- Elsevier BV
- Citation
- Energy Storage Materials, v.54, pp.863 - 874
- Abstract
- Development of rechargeable Zn-metal batteries is limited by side reactions, dendrite growth, and low iondiffusion kinetics on Zn-anodes. Herein, alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes by radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. Plasma energy and alkali-metal hydroxide adatoms develop p-type semiconducting property and chemical durability of the carbon film by inducing dangling bonds and O-containing functional groups, to form Schottky contact between CCF-M and Zn metal with significant Schottky barrier (FSB) and built-in voltage (V-bi). CCF-M, Phi(SB), and V-bi effectively enhanced the corrosion resistance, dendrite suppression, and Zn2+-transport kinetics of the Zn-anode, respectively. Specifically, Zn2+ was guided to deposit rapidly and uniformly below CCF-M without dendrites and side reactions during over 5000 and 1302 cycles in symmetric cell at 1.0 and 10 mA cm(-2), respectively, with a capacity retention of similar to 83% after 5000 cycles at 1.0 A g(V21O5)(-1) in Zn vertical bar V2O5 full cell.
- Keywords
- OXYGEN; STABILITY; ZINC-ION BATTERIES; WORK FUNCTION; AMORPHOUS-CARBON; HIGH-CAPACITY; LONG-LIFE; GRAPHENE; Schottky contact; Built-in voltage; Ion transport kinetics; Semiconducting passivation layer; Amorphous carbon film; Dendrite-free Zn-metal anode
- ISSN
- 2405-8297
- URI
- https://pubs.kist.re.kr/handle/201004/114135
- DOI
- 10.1016/j.ensm.2022.11.031
- Appears in Collections:
- KIST Article > 2023
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.