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dc.contributor.authorJeon, Jiho-
dc.contributor.authorWoo, Chaeheon-
dc.contributor.authorChoi, Kyung Hwan-
dc.contributor.authorJeong, Byung Joo-
dc.contributor.authorKang, Jinsu-
dc.contributor.authorZhang, Xiaojie-
dc.contributor.authorDong, Xue-
dc.contributor.authorKim, Tae Yeong-
dc.contributor.authorAhn, Jungyoon-
dc.contributor.authorOh, Hyung-Suk-
dc.contributor.authorYu, Hak Ki-
dc.contributor.authorChoi, Jae -Young-
dc.date.accessioned2024-01-19T10:33:41Z-
dc.date.available2024-01-19T10:33:41Z-
dc.date.created2022-09-22-
dc.date.issued2022-12-
dc.identifier.issn0925-8388-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114266-
dc.description.abstractFor the first time, a new structure of Ta2Ni3S8, one of the family systems of M2N3X8, a recently studied one-dimensional chalcogenide material, was synthesized. Unlike Ta2Ni3S8 in the orthorhombic phase, which is known to have semiconductor properties, Ta2Ni3S8 in the tetragonal phase displayed metallic material properties. Structural analysis through X-ray diffraction confirmed that the tetragonal Ta2Ni3S8 (T-Ta2Ni3S8) had the same structure as the tetragonal Ta2Ni3Se8 (T-Ta2Ni3Se8), a material with an S-and Se-substitution; the only difference was the lattice constant. Additionally, different elemental analyses were used to confirm that the ratio of Ta:Ni:S elements was 2:3:8. This study is significant as basic research that can be applied to various electronic devices by applying bandgap tuning and lattice-matched electrode design based on M2N3X8 family material.(c) 2022 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherElsevier BV-
dc.titleSynthesis and polymorphism of a new phase 1D chalcogenide M2N3X8 structure based on the periodic table: Ta2Ni3S8 with a tetragonal structure-
dc.typeArticle-
dc.identifier.doi10.1016/j.jallcom.2022.166752-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJournal of Alloys and Compounds, v.926-
dc.citation.titleJournal of Alloys and Compounds-
dc.citation.volume926-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000852180900001-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-
dc.type.docTypeArticle-
dc.subject.keywordPlusSINGLE-LAYER-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordAuthorPolymorphism-
dc.subject.keywordAuthorLow-dimensional materials-
dc.subject.keywordAuthor1D chalcogenide M2N3X8-
dc.subject.keywordAuthorTa2Ni3S8-
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