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dc.contributor.authorKang, Gumin-
dc.date.accessioned2024-01-19T10:38:45Z-
dc.date.available2024-01-19T10:38:45Z-
dc.date.created2022-02-28-
dc.date.issued2018-07-
dc.identifier.issn2166-8884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114359-
dc.description.abstractSilicon nitride (Si3N4) has attracted numerous research interests in the field of photonic integrated circuit due to its CMOS compatibility, broad transparency window, and strong optical nonlinearity. We demonstrate high-Q Si3N4 micro-disk resonator for on-chip temperature sensing device. The micro-disk resonator exhibits Q-factor up to 3.0 x 10(4) in the near infrared region (938 nm). The spectral shift of WGM resonance as a function of temperature was monitored to calculate the sensitivity of device.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleOn-chip temperature sensor using high-Q Si3N4 micro-disk resonator-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation23rd Opto-Electronics and Communications Conference (OECC)-
dc.citation.title23rd Opto-Electronics and Communications Conference (OECC)-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceJeju, SOUTH KOREA-
dc.citation.conferenceDate2018-07-02-
dc.relation.isPartOf23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018)-
dc.identifier.wosid000477695500051-
dc.identifier.scopusid2-s2.0-85068011352-
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KIST Conference Paper > 2018
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