Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Park, Sewon | - |
dc.contributor.author | Ha, Jisang | - |
dc.contributor.author | Khan, Muhammad Farooq | - |
dc.contributor.author | Im, Chaekwang | - |
dc.contributor.author | Park, Jae Young | - |
dc.contributor.author | Yoo, Sang Hyuk | - |
dc.contributor.author | Rehman, Malik Abdul | - |
dc.contributor.author | Kang, Keonwook | - |
dc.contributor.author | Lee, Soo Hyun | - |
dc.contributor.author | Jun, Seong Chan | - |
dc.date.accessioned | 2024-01-19T11:04:08Z | - |
dc.date.available | 2024-01-19T11:04:08Z | - |
dc.date.created | 2022-09-15 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/114589 | - |
dc.description.abstract | Two-dimensional layered materials have attracted attention for optoelectronic applications owing to their remarkable photonic properties. Here, we report a homojunction device fabricated using n-type ReS2 flakes; the device exhibits p-n diode characteristics. The band structures of 1-5 L ReS2 are theoretically calculated, and the insensitivity of work function to the thickness is experimentally investigated using Kelvin probe force microscopy. The contact resistance and intrinsic mobility of ReS2 field-effect transistors with different thicknesses are evaluated using the Y-function method (YFM). As the thickness of the flakes increases, the contact resistance decreases while the intrinsic mobility increases, leading to a reduction in the threshold voltage. Moreover, the rectifying behavior of a vertical ReS2 (thin)-ReS2 (thick) homostructure is measured at various bias and gate voltages, where the devices exhibit a noticeable rectification ratio of similar to 4 x 10(2) at V-d = 5 V and V-g = 20 V. The ideality factor of the devices is similar to 1.16 at V-g = -20 V. In addition, broadband near-infrared (NIR) response of the single-flake homostructure of ReS2 is observed, and it exhibited a responsivity of 170.9 A W-1 at 365 nm. Our study of the ReS2 homostructure leads to the advancement in electronic devices, such as photodetectors, transistors, and photovoltaic cells of new technology. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Pronounced Optoelectronic Effect in n-n ReS2 Homostructure | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsaelm.2c00567 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ACS Applied Electronic Materials, v.4, no.9, pp.4306 - 4315 | - |
dc.citation.title | ACS Applied Electronic Materials | - |
dc.citation.volume | 4 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 4306 | - |
dc.citation.endPage | 4315 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000849328400001 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HOMOTYPE HETEROJUNCTION | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | HOMOJUNCTION | - |
dc.subject.keywordPlus | JUNCTION | - |
dc.subject.keywordPlus | PHOTODETECTION | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | ReS2 | - |
dc.subject.keywordAuthor | homostructure | - |
dc.subject.keywordAuthor | density functional theory | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | infrared | - |
dc.subject.keywordAuthor | responsivity | - |
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