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dc.contributor.authorKim, Minkyung-
dc.contributor.authorPark, Eunpyo-
dc.contributor.authorPark, Jongkil-
dc.contributor.authorKim, Jaewook-
dc.contributor.authorJeong, YeonJoo-
dc.contributor.authorLee, Suyoun-
dc.contributor.authorKim, Inho-
dc.contributor.authorPark, Jong-Keuk-
dc.contributor.authorPark, Sung-Yun-
dc.contributor.authorKwak, Joon Young-
dc.date.accessioned2024-01-19T11:34:08Z-
dc.date.available2024-01-19T11:34:08Z-
dc.date.created2022-06-17-
dc.date.issued2022-07-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114916-
dc.description.abstractThis study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-x gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.-
dc.languageEnglish-
dc.publisherElsevier BV-
dc.titleA triple-level cell charge trap flash memory device with CVD-grown MoS2-
dc.typeArticle-
dc.identifier.doi10.1016/j.rinp.2022.105620-
dc.description.journalClass1-
dc.identifier.bibliographicCitationResults in Physics, v.38-
dc.citation.titleResults in Physics-
dc.citation.volume38-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000804944900004-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorCharge trap flash-
dc.subject.keywordAuthorTriple-level cell-
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