A triple-level cell charge trap flash memory device with CVD-grown MoS2

Authors
Kim, MinkyungPark, EunpyoPark, JongkilKim, JaewookJeong, YeonJooLee, SuyounKim, InhoPark, Jong-KeukPark, Sung-YunKwak, Joon Young
Issue Date
2022-07
Publisher
Elsevier BV
Citation
Results in Physics, v.38
Abstract
This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-x gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.
Keywords
MOBILITY; MoS2; Charge trap flash; Triple-level cell
URI
https://pubs.kist.re.kr/handle/201004/114916
DOI
10.1016/j.rinp.2022.105620
Appears in Collections:
KIST Article > 2022
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