A triple-level cell charge trap flash memory device with CVD-grown MoS2
- Authors
- Kim, Minkyung; Park, Eunpyo; Park, Jongkil; Kim, Jaewook; Jeong, YeonJoo; Lee, Suyoun; Kim, Inho; Park, Jong-Keuk; Park, Sung-Yun; Kwak, Joon Young
- Issue Date
- 2022-07
- Publisher
- Elsevier BV
- Citation
- Results in Physics, v.38
- Abstract
- This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-x gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.
- Keywords
- MOBILITY; MoS2; Charge trap flash; Triple-level cell
- URI
- https://pubs.kist.re.kr/handle/201004/114916
- DOI
- 10.1016/j.rinp.2022.105620
- Appears in Collections:
- KIST Article > 2022
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