Fabrication of blue-shifted Fabry-Perot laser diodes for integration with optical passive waveguides

Abstract

Laser diodes monolithically integrated with a passive wave-guide is fabricated by using a quantum-well intermixing. This technique first consists of using a photolithography and reactive ion etching process to create a Si3N4 implant mask region on the sample. This is followed by a 1-MeV phosphorous ion implantation at a dose of 5x10(14) p ions/cm(2) at 200 degrees C. A subsequent two-step RTA annealing QW intermixing through the diffusion of the point defects. For the integration of a laser diode and a passive waveguide, the mirror facet is formed by creating a deeply-etched trench between an active and passive region by RIE etching. The lasing operation and shifted lasing wavelengths are measured and compared experimentally.(C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.