Enhancement of the thermoelectric performance of n - type Bi2O2Se by Ce4+ doping
- Authors
- Hong, H. Y.; Kim, D. H.; Won, S. O.; Park, K.
- Issue Date
- 2021-11
- Publisher
- ELSEVIER
- Citation
- JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, v.15, pp.4161 - 4172
- Abstract
- We report on the effect of Ce4+ doping on the thermoelectric properties of Bi2-xCexO2Se (0 < x < 0.15). Bi(2-x)CexO(2)Se crystallizes in the tetragonal crystal structure (I4/mmm space group). The doping of Ce4+ for Bi3+ leads to a significant enhancement of electrical conductivity, which is mainly attributed to the increased electron concentration and the decreased band-gap energy. The Ce4+ doping decreases the absolute Seebeck coefficient and increases the thermal conductivity. The highest value of ZT (0.26) is obtained for Bi1.9Ce0.1O2Se at 773 K, which is 37% larger than that of pure Bi2O2Se (0.19) at 773 K. We believe that the Ce4+ doping is highly effective to enhance the thermoelectric properties of Bi2O2Se. (C) 2021 The Author(s). Published by Elsevier B.V.
- Keywords
- THERMAL TRANSPORT-PROPERTIES; CARRIER CONCENTRATION; GRAIN-GROWTH; THIN-FILMS; CERAMICS; MOBILITY; PBTE; BICUSEO; ENERGY; OXIDE; Sintering; Synthesis; Microstructure; X-ray diffraction; Thermoelectric properties; Ceramics
- ISSN
- 2238-7854
- URI
- https://pubs.kist.re.kr/handle/201004/116216
- DOI
- 10.1016/j.jmrt.2021.10.002
- Appears in Collections:
- KIST Article > 2021
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