Enhancement of the thermoelectric performance of n - type Bi2O2Se by Ce4+ doping

Authors
Hong, H. Y.Kim, D. H.Won, S. O.Park, K.
Issue Date
2021-11
Publisher
ELSEVIER
Citation
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, v.15, pp.4161 - 4172
Abstract
We report on the effect of Ce4+ doping on the thermoelectric properties of Bi2-xCexO2Se (0 < x < 0.15). Bi(2-x)CexO(2)Se crystallizes in the tetragonal crystal structure (I4/mmm space group). The doping of Ce4+ for Bi3+ leads to a significant enhancement of electrical conductivity, which is mainly attributed to the increased electron concentration and the decreased band-gap energy. The Ce4+ doping decreases the absolute Seebeck coefficient and increases the thermal conductivity. The highest value of ZT (0.26) is obtained for Bi1.9Ce0.1O2Se at 773 K, which is 37% larger than that of pure Bi2O2Se (0.19) at 773 K. We believe that the Ce4+ doping is highly effective to enhance the thermoelectric properties of Bi2O2Se. (C) 2021 The Author(s). Published by Elsevier B.V.
Keywords
THERMAL TRANSPORT-PROPERTIES; CARRIER CONCENTRATION; GRAIN-GROWTH; THIN-FILMS; CERAMICS; MOBILITY; PBTE; BICUSEO; ENERGY; OXIDE; Sintering; Synthesis; Microstructure; X-ray diffraction; Thermoelectric properties; Ceramics
ISSN
2238-7854
URI
https://pubs.kist.re.kr/handle/201004/116216
DOI
10.1016/j.jmrt.2021.10.002
Appears in Collections:
KIST Article > 2021
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