High-K and low loss Bi1.5Zn1.0Nb1.5O7/polyimide composite films for application in embedded capacitors

Authors
Choi, Seung-HoonKim, Il-DooHong, Jae-MinOh, Seong-Guen
Issue Date
2007
Publisher
WILEY-V C H VERLAG GMBH
Citation
IUPAC International Symposium on Advanced Polymers for Emerging Technologies, v.249, pp.241 - 246
Abstract
We report on the role of Bi1.5Zn1.0Nb1.5O7 (BZN) ceramic fillers in notably reducing the dielectric loss of BZN/polyimide composite films manufactured for application in flexible RF embedded capacitors. The composite films were synthesized using a colloidal process. INAAT (isopropyl tris(N-amino-ethyl aminoethyl)titanate) was used as a coupling agent for homogeneous dispersion of BZN particles into a polyimide matrix. The BZN/polyimide composite films (BZN content at 50 Vol%) exhibited a low dielectric loss of 0.0369 at 12 MHz while retaining a high dielectric constant of 14.75.
ISSN
1022-1360
URI
https://pubs.kist.re.kr/handle/201004/116384
DOI
10.1002/masy.200750339
Appears in Collections:
KIST Conference Paper > 2007
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