Set power dependency on the resistive switching in Cr-doped SrZrO3 thin films for nonvolatile memory devices

Abstract

Pt/Cr-doped SrZrO3/SrRuO3 metal-oxide-metal (MOM) structures were fabricated by off-axis rf sputtering for nonvolatile memory applications. The MOM structures showed reproducible and bistable resistive switching behaviors. From the low-temperature IN measurements, it was found that the low-resistance state (LRS) was governed by ohmic conduction. In addition, the characteristics of LRS were influenced by switching parameters. With increasing set power and sweep delay time, the LRS current was decreased. These results suggested that the resistive switching mechanism is related to the formation of local conducting path in SrZrO3 matrix.