Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Seong, Han-Kyu | - |
dc.contributor.author | Lee, Seung-Yong | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Kim, Tae-Hong | - |
dc.contributor.author | Cho, Nam-Kyu | - |
dc.contributor.author | Nahm, Kee-Suk | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.accessioned | 2024-01-19T14:07:37Z | - |
dc.date.available | 2024-01-19T14:07:37Z | - |
dc.date.created | 2022-03-07 | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0255-5476 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/116722 | - |
dc.description.abstract | We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several mu m. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm(2)/(VS) for a source-drain voltage (V-SD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC. The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process. | - |
dc.language | English | - |
dc.publisher | TRANS TECH PUBLICATIONS LTD | - |
dc.title | Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor | - |
dc.type | Conference | - |
dc.identifier.doi | 10.4028/www.scientific.net/MSF.527-529.771 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), v.527-529, pp.771 - 774 | - |
dc.citation.title | International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) | - |
dc.citation.volume | 527-529 | - |
dc.citation.startPage | 771 | - |
dc.citation.endPage | 774 | - |
dc.citation.conferencePlace | SZ | - |
dc.citation.conferencePlace | Pittsburgh, PA | - |
dc.citation.conferenceDate | 2005-09-18 | - |
dc.relation.isPartOf | Silicon Carbide and Related Materials 2005, Pts 1 and 2 | - |
dc.identifier.wosid | 000244227200182 | - |
dc.type.docType | Proceedings Paper | - |
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