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dc.contributor.authorSeong, Han-Kyu-
dc.contributor.authorLee, Seung-Yong-
dc.contributor.authorChoi, Heon-Jin-
dc.contributor.authorKim, Tae-Hong-
dc.contributor.authorCho, Nam-Kyu-
dc.contributor.authorNahm, Kee-Suk-
dc.contributor.authorLee, Sang-Kwon-
dc.date.accessioned2024-01-19T14:07:37Z-
dc.date.available2024-01-19T14:07:37Z-
dc.date.created2022-03-07-
dc.date.issued2006-
dc.identifier.issn0255-5476-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/116722-
dc.description.abstractWe demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several mu m. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm(2)/(VS) for a source-drain voltage (V-SD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC. The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.-
dc.languageEnglish-
dc.publisherTRANS TECH PUBLICATIONS LTD-
dc.titleFabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor-
dc.typeConference-
dc.identifier.doi10.4028/www.scientific.net/MSF.527-529.771-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), v.527-529, pp.771 - 774-
dc.citation.titleInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005)-
dc.citation.volume527-529-
dc.citation.startPage771-
dc.citation.endPage774-
dc.citation.conferencePlaceSZ-
dc.citation.conferencePlacePittsburgh, PA-
dc.citation.conferenceDate2005-09-18-
dc.relation.isPartOfSilicon Carbide and Related Materials 2005, Pts 1 and 2-
dc.identifier.wosid000244227200182-
dc.type.docTypeProceedings Paper-
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KIST Conference Paper > 2006
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