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dc.contributor.authorKim, YS-
dc.contributor.authorChoi, HK-
dc.contributor.authorKhim, ZG-
dc.contributor.authorWoo, JC-
dc.contributor.authorPark, YD-
dc.contributor.authorChun, SH-
dc.date.accessioned2024-01-19T14:07:39Z-
dc.date.available2024-01-19T14:07:39Z-
dc.date.created2022-03-07-
dc.date.issued2006-
dc.identifier.issn1862-6351-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/116723-
dc.description.abstractWe fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageEnglish-
dc.publisherWILEY-VCH, INC-
dc.titleTemperature dependence of the anomalous hall effect in ferromagnetic (Ga,Mn)As epilayers-
dc.typeConference-
dc.identifier.doi10.1002/pssc.200564144-
dc.description.journalClass1-
dc.identifier.bibliographicCitation32nd International Symposium on Compound Semiconductors, v.3, no.3, pp.697 - +-
dc.citation.title32nd International Symposium on Compound Semiconductors-
dc.citation.volume3-
dc.citation.number3-
dc.citation.startPage697-
dc.citation.endPage+-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceRust, GERMANY-
dc.citation.conferenceDate2005-09-18-
dc.relation.isPartOfPHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3-
dc.identifier.wosid000236810000077-
dc.identifier.scopusid2-s2.0-33646181381-
dc.type.docTypeProceedings Paper-
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KIST Conference Paper > 2006
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