Spin and orbital properties of perpendicular magnetic anisotropy for spin-orbit torque material devices

Authors
Kim, YounghakJeong, WonminYun, DeokhyunAhn, Gwang-EunLee, OukJae
Issue Date
2021-04-01
Publisher
ELSEVIER
Citation
APPLIED SURFACE SCIENCE, v.544
Abstract
Computer engineers have been attempting to incorporate spin-based devices in future computer architectures, such as processing-in-memory (PIM) in artificial intelligence systems. A successful PIM requires ongoing efforts for developing fast and low-power spintronic material devices. The spin-orbit torque (SOT) device, which is associated with perpendicular magnetic anisotropy (PMA) materials, is a promising candidate. Herein, macroscopic and nanoscopic studies on the spin-orbit interaction of two distinct SOT-PMA systems are conducted to enhance our understanding of the interfacial PMA and pave the way of material design for reliable and high-performance spin memory and logic devices. The experimental results indicate that further theoretical studies are needed to establish a sophisticated explanation instead of the conventional hybridization for the interfacial PMA. In addition, an interesting phenomenon, which can be a useful ingredient while applying thermal energy barrier, concerning the integration of reliable spin devices in future commercial computer systems is reported.
Keywords
Heavy metal/ferromagnet/oxide heterostructures; Spin-orbit coupling; Perpendicular magnetic anisotropy; Interfacial phenomena; Material design; Spintronics
ISSN
0169-4332
URI
https://pubs.kist.re.kr/handle/201004/117154
DOI
10.1016/j.apsusc.2021.148959
Appears in Collections:
KIST Article > 2021
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE