Spin and orbital properties of perpendicular magnetic anisotropy for spin-orbit torque material devices
- Authors
- Kim, Younghak; Jeong, Wonmin; Yun, Deokhyun; Ahn, Gwang-Eun; Lee, OukJae
- Issue Date
- 2021-04-01
- Publisher
- ELSEVIER
- Citation
- APPLIED SURFACE SCIENCE, v.544
- Abstract
- Computer engineers have been attempting to incorporate spin-based devices in future computer architectures, such as processing-in-memory (PIM) in artificial intelligence systems. A successful PIM requires ongoing efforts for developing fast and low-power spintronic material devices. The spin-orbit torque (SOT) device, which is associated with perpendicular magnetic anisotropy (PMA) materials, is a promising candidate. Herein, macroscopic and nanoscopic studies on the spin-orbit interaction of two distinct SOT-PMA systems are conducted to enhance our understanding of the interfacial PMA and pave the way of material design for reliable and high-performance spin memory and logic devices. The experimental results indicate that further theoretical studies are needed to establish a sophisticated explanation instead of the conventional hybridization for the interfacial PMA. In addition, an interesting phenomenon, which can be a useful ingredient while applying thermal energy barrier, concerning the integration of reliable spin devices in future commercial computer systems is reported.
- Keywords
- Heavy metal/ferromagnet/oxide heterostructures; Spin-orbit coupling; Perpendicular magnetic anisotropy; Interfacial phenomena; Material design; Spintronics
- ISSN
- 0169-4332
- URI
- https://pubs.kist.re.kr/handle/201004/117154
- DOI
- 10.1016/j.apsusc.2021.148959
- Appears in Collections:
- KIST Article > 2021
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