Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, Jae Kap | - |
dc.contributor.author | Kim, Jin Gyu | - |
dc.contributor.author | Hembram, K. P. S. S. | - |
dc.contributor.author | Yu, Seunggun | - |
dc.contributor.author | Lee, Sang Gil | - |
dc.date.accessioned | 2024-01-19T15:02:51Z | - |
dc.date.available | 2024-01-19T15:02:51Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 2052-5206 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/117195 | - |
dc.description.abstract | Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (similar to 10-500 nm in thickness) exhibit stacks of parallel nanosheets (similar to 10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2-20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as 'substrate-induced 2D growth', where the substrate plays the role of pressure. | - |
dc.language | English | - |
dc.publisher | INT UNION CRYSTALLOGRAPHY | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | GRAPHENE | - |
dc.title | AB-stacked nanosheet-based hexagonal boron nitride | - |
dc.type | Article | - |
dc.identifier.doi | 10.1107/S2052520621000317 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, v.77, pp.260 - 265 | - |
dc.citation.title | ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS | - |
dc.citation.volume | 77 | - |
dc.citation.startPage | 260 | - |
dc.citation.endPage | 265 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000640218900008 | - |
dc.identifier.scopusid | 2-s2.0-85104091318 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordAuthor | hexagonal boron nitride | - |
dc.subject.keywordAuthor | AB stacking | - |
dc.subject.keywordAuthor | high-resolution transmission electron microscopy | - |
dc.subject.keywordAuthor | simulation | - |
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