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dc.contributor.authorLee, Jae Kap-
dc.contributor.authorKim, Jin Gyu-
dc.contributor.authorHembram, K. P. S. S.-
dc.contributor.authorYu, Seunggun-
dc.contributor.authorLee, Sang Gil-
dc.date.accessioned2024-01-19T15:02:51Z-
dc.date.available2024-01-19T15:02:51Z-
dc.date.created2021-09-05-
dc.date.issued2021-04-
dc.identifier.issn2052-5206-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/117195-
dc.description.abstractHexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (similar to 10-500 nm in thickness) exhibit stacks of parallel nanosheets (similar to 10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2-20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as 'substrate-induced 2D growth', where the substrate plays the role of pressure.-
dc.languageEnglish-
dc.publisherINT UNION CRYSTALLOGRAPHY-
dc.subjectHETEROSTRUCTURES-
dc.subjectGRAPHENE-
dc.titleAB-stacked nanosheet-based hexagonal boron nitride-
dc.typeArticle-
dc.identifier.doi10.1107/S2052520621000317-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, v.77, pp.260 - 265-
dc.citation.titleACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS-
dc.citation.volume77-
dc.citation.startPage260-
dc.citation.endPage265-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000640218900008-
dc.identifier.scopusid2-s2.0-85104091318-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaCrystallography-
dc.type.docTypeArticle-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordAuthorhexagonal boron nitride-
dc.subject.keywordAuthorAB stacking-
dc.subject.keywordAuthorhigh-resolution transmission electron microscopy-
dc.subject.keywordAuthorsimulation-
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