DSpace at KISTKIST Conference Paper2002

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dc.contributor.authorHan, IK-
dc.contributor.authorHeo, DC-
dc.contributor.authorChoi, WJ-
dc.contributor.authorLee, JI-
dc.date.accessioned2024-01-19T15:38:33Z-
dc.date.available2024-01-19T15:38:33Z-
dc.date.created2022-03-07-
dc.date.issued2002-
dc.identifier.issn0277-786X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/117627-
dc.description.abstractThree types of thin layer were inserted between 1st and 2nd separate confinement heterostructure (SCH) layer of 1.55 gm InGaAaP/InGaAs multi-quantum well (MQW) laser diodes. The three types were Type A (p-InGaAsP, 1x10(17)/cm(3)), Type B (p-InGaAsP, 2x10(18)/cm(3)), and Type C (p-InP, 2x10(18)/cm(3)), respectively. It was shown that the light-current (L-I) characteristics for those three types were similar, while the characteristic temperature (To) was higher for type B than others.-
dc.languageEnglish-
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING-
dc.titleStudy on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer-
dc.typeConference-
dc.identifier.doi10.1117/12.481052-
dc.description.journalClass1-
dc.identifier.bibliographicCitationConference on Asia-Pacific Optical and Wireless Communication (APOC 2002), v.4905, pp.527 - 532-
dc.citation.titleConference on Asia-Pacific Optical and Wireless Communication (APOC 2002)-
dc.citation.volume4905-
dc.citation.startPage527-
dc.citation.endPage532-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSHANGHAI, PEOPLES R CHINA-
dc.citation.conferenceDate2002-10-15-
dc.relation.isPartOfAPOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS-
dc.identifier.wosid000179013500070-
dc.identifier.scopusid2-s2.0-0036454581-
dc.type.docTypeProceedings Paper-
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