DSpace at KISTKIST Conference Paper2002

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dc.contributor.authorKim, HJ-
dc.contributor.authorKim, DM-
dc.contributor.authorHan, IK-
dc.contributor.authorChoi, WJ-
dc.contributor.authorZimmermann, J-
dc.contributor.authorLee, J-
dc.date.accessioned2024-01-19T15:38:40Z-
dc.date.available2024-01-19T15:38:40Z-
dc.date.created2022-03-07-
dc.date.issued2002-
dc.identifier.issn0277-786X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/117635-
dc.description.abstractOptical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical illumination is explained. The results show power law relation between the current variation and the optical intensity. Near-threshold region in saturation region is found to. be most sensitive to the optical intensity variation.-
dc.languageEnglish-
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING-
dc.titleP-channel MODFET as an optoelectronic detector-
dc.typeConference-
dc.identifier.doi10.1117/12.481019-
dc.description.journalClass1-
dc.identifier.bibliographicCitationConference on Asia-Pacific Optical and Wireless Communication (APOC 2002), v.4905, pp.326 - 334-
dc.citation.titleConference on Asia-Pacific Optical and Wireless Communication (APOC 2002)-
dc.citation.volume4905-
dc.citation.startPage326-
dc.citation.endPage334-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSHANGHAI, PEOPLES R CHINA-
dc.citation.conferenceDate2002-10-15-
dc.relation.isPartOfAPOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS-
dc.identifier.wosid000179013500041-
dc.identifier.scopusid2-s2.0-18744410641-
dc.type.docTypeProceedings Paper-
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