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dc.contributor.authorJeon, Dae-Young-
dc.contributor.authorMouis, Mireille-
dc.contributor.authorBarraud, Sylvain-
dc.contributor.authorGhibaudo, Gerard-
dc.date.accessioned2024-01-19T16:30:36Z-
dc.date.available2024-01-19T16:30:36Z-
dc.date.created2021-09-02-
dc.date.issued2020-11-
dc.identifier.issn0018-9383-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/117949-
dc.description.abstractSubstrate-bias-affected unique electrical characteristics of junctionless transistors (JLTs) were investigated in detail. Bulk channel thickness of JLTs (t(si_ eff)) was effectively modulated by back-gate bias (V-gb). The variation in threshold voltage (V-th) and mobility degradation were observed in the reduced t(si_eff), due to the negative V-gb-induced depletion of free electrons. The V-gb effect was also influenced significantly by the doping concentration in JLTs. In addition, numerical simulations verified those results and analytical equations explained well the experimental results.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectNANOWIRE TRANSISTORS-
dc.subjectMOBILITY-
dc.subjectWIDTH-
dc.titleControlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias-
dc.typeArticle-
dc.identifier.doi10.1109/TED.2020.3020284-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.11, pp.4736 - 4740-
dc.citation.titleIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.volume67-
dc.citation.number11-
dc.citation.startPage4736-
dc.citation.endPage4740-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000584285700038-
dc.identifier.scopusid2-s2.0-85095713456-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusNANOWIRE TRANSISTORS-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusWIDTH-
dc.subject.keywordAuthorAnalytical equations-
dc.subject.keywordAuthoreffective channel thickness (t(si_eff))-
dc.subject.keywordAuthorjunctionless transistors (JLTs)-
dc.subject.keywordAuthormobility degradation-
dc.subject.keywordAuthornumerical simulation-
dc.subject.keywordAuthorsubstrate bias-
dc.subject.keywordAuthorvariation in threshold voltage-
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