Simple estimation of intrinsic electrical parameters in junctionless transistors

Abstract

Junctionless transistors (JLTs) are an attractive candidate for advanced complementary metal oxide semiconductor technologies, but their mode of operation is very different from that of conventional inversion-mode transistors. In this study, we explore the close relationship between the key electrical parameters of JLTs, such as doping concentration (N-d), threshold voltage (V-th), and flat-band voltage (V-fb). The separation between V-fb and V-th in JLTs increases linearly with N-d, and the rate of increase in the separation was affected by the maximum depletion depth (D-max) at given N-d. These findings will enable researchers to estimate simply the N-d or V-fb values of not only JLTs but also JLT-like multi-layer transition metal dichalcogenide-based transistors.