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dc.contributor.authorShim, Jaeho-
dc.contributor.authorPark, Junghoon-
dc.contributor.authorKwon, Kyungmok-
dc.contributor.authorLee, Kyu Seung-
dc.contributor.authorSon, Dong Ick-
dc.contributor.authorYu, Kyoungsik-
dc.date.accessioned2024-01-19T17:01:17Z-
dc.date.available2024-01-19T17:01:17Z-
dc.date.created2021-09-05-
dc.date.issued2020-08-01-
dc.identifier.issn0167-577X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118272-
dc.description.abstractThe tungsten oxide nonvolatile memory devices were fabricated using the photothermal in-situ oxidation method. The photothermal in-situ oxidation method can monitor the oxidation process in real time. Raman spectra revealed that tungsten oxides were formed by thermal oxidation. The ON/OFF ratio of the current bistability for the device was as large as similar to 10(2) at a 2 V reading voltage, and the cycling endurance of the ON/OFF switching for the devices was stable without noticeable degradation. Memory mechanisms for device are described using fitted the I-V curves. (C) 2020 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.titleTungsten oxide nonvolatile memory devices using photothermal in-situ oxidation method-
dc.typeArticle-
dc.identifier.doi10.1016/j.matlet.2020.127805-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMATERIALS LETTERS, v.272-
dc.citation.titleMATERIALS LETTERS-
dc.citation.volume272-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000535697700017-
dc.identifier.scopusid2-s2.0-85083730498-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorNonvolatile memory-
dc.subject.keywordAuthorResistive switching-
dc.subject.keywordAuthorTungsten oxide-
dc.subject.keywordAuthorPhotothermal oxidation-
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