Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Dae-Young | - |
dc.contributor.author | Nam, Deuk Hyeon | - |
dc.contributor.author | Lee, Dong Su | - |
dc.contributor.author | Lee, Seoung-Ki | - |
dc.contributor.author | Park, Min | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2024-01-19T17:03:40Z | - |
dc.date.available | 2024-01-19T17:03:40Z | - |
dc.date.created | 2021-09-04 | - |
dc.date.issued | 2020-07-01 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/118411 | - |
dc.description.abstract | Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (I-on/I-off) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the I-on/I-off ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.title | Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/1361-6463/ab84a5 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.27 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 27 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000533396500001 | - |
dc.identifier.scopusid | 2-s2.0-85085738325 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordAuthor | multi-layer MoS2 | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | ionic-liquid | - |
dc.subject.keywordAuthor | back-gate biasing | - |
dc.subject.keywordAuthor | on-current to off-current ratio | - |
dc.subject.keywordAuthor | numerical simulation | - |
dc.subject.keywordAuthor | analytical equations | - |
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