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dc.contributor.authorJeon, Dae-Young-
dc.contributor.authorNam, Deuk Hyeon-
dc.contributor.authorLee, Dong Su-
dc.contributor.authorLee, Seoung-Ki-
dc.contributor.authorPark, Min-
dc.contributor.authorPark, So Jeong-
dc.contributor.authorKim, Gyu-Tae-
dc.date.accessioned2024-01-19T17:03:40Z-
dc.date.available2024-01-19T17:03:40Z-
dc.date.created2021-09-04-
dc.date.issued2020-07-01-
dc.identifier.issn0022-3727-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118411-
dc.description.abstractIonic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (I-on/I-off) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the I-on/I-off ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectHIGH-PERFORMANCE-
dc.titleTuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors-
dc.typeArticle-
dc.identifier.doi10.1088/1361-6463/ab84a5-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.27-
dc.citation.titleJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.citation.volume53-
dc.citation.number27-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000533396500001-
dc.identifier.scopusid2-s2.0-85085738325-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordAuthormulti-layer MoS2-
dc.subject.keywordAuthorfield-effect transistors-
dc.subject.keywordAuthorionic-liquid-
dc.subject.keywordAuthorback-gate biasing-
dc.subject.keywordAuthoron-current to off-current ratio-
dc.subject.keywordAuthornumerical simulation-
dc.subject.keywordAuthoranalytical equations-
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