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dc.contributor.authorPark, JS-
dc.contributor.authorLee, S-
dc.contributor.authorJu, BK-
dc.contributor.authorJang, J-
dc.contributor.authorJeon, D-
dc.contributor.authorOh, MH-
dc.date.accessioned2024-01-19T17:08:53Z-
dc.date.available2024-01-19T17:08:53Z-
dc.date.created2022-03-07-
dc.date.issued1999-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118492-
dc.description.abstractElectron emission currents and stability in the silicon-tip field emission arrays (FEAs) have bee improved by silicide formation on silicon using Nb (Niobium). The formation of Nb-silicide was confirmed by X-Ray Diffraction (XRD) data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47V and the emission current fluctuation was decreased from 5% to 2%.-
dc.languageEnglish-
dc.publisherSOCIETY INFORMATION DISPLAY TAIPEI CHAPTER-
dc.titleFabrication and estimation of characteristics for Nb-silicide FEAs-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation5th Asian Symposium on Information Display (ASID 99), pp.49 - 52-
dc.citation.title5th Asian Symposium on Information Display (ASID 99)-
dc.citation.startPage49-
dc.citation.endPage52-
dc.citation.conferencePlaceCH-
dc.citation.conferencePlaceNATL CHIAO TUNG UNIV, HSINCHU, TAIWAN-
dc.citation.conferenceDate1999-03-17-
dc.relation.isPartOfASID'99: PROCEEDINGS OF THE 5TH ASIAN SYMPOSIUM ON INFORMATION DISPLAY-
dc.identifier.wosid000081835600011-
dc.identifier.scopusid2-s2.0-84896914590-
dc.type.docTypeProceedings Paper-
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