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dc.contributor.authorOh, JH-
dc.contributor.authorLee, YH-
dc.contributor.authorJu, BK-
dc.contributor.authorPark, CY-
dc.contributor.authorShin, DK-
dc.contributor.authorOh, MH-
dc.date.accessioned2024-01-19T17:39:26Z-
dc.date.available2024-01-19T17:39:26Z-
dc.date.created2022-03-07-
dc.date.issued1997-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118773-
dc.description.abstractThe dielectric reliability of the multilayered BaTiO3 thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to tile roughness of the surface of the multilayered BaTiO3 thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region.-
dc.languageEnglish-
dc.publisherI E E E-
dc.titleEffects of the thickness on the dielectric reliability of multilayered BaTiO3 insulating layer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation5th International Conference on Properties and Applications of Dielectric Materials, pp.1026 - 1029-
dc.citation.title5th International Conference on Properties and Applications of Dielectric Materials-
dc.citation.startPage1026-
dc.citation.endPage1029-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSEOUL, SOUTH KOREA-
dc.citation.conferenceDate1997-05-25-
dc.relation.isPartOfPROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1 AND 2-
dc.identifier.wosidA1997BJ48U00256-
dc.identifier.scopusid2-s2.0-0030706898-
dc.type.docTypeProceedings Paper-
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