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dc.contributor.authorMoon, Hongjae-
dc.contributor.authorKim, Jeongmin-
dc.contributor.authorChun, Dong Won-
dc.contributor.authorHong, Seokkyoon-
dc.contributor.authorYoon, Young Soo-
dc.contributor.authorLee, Wooyoung-
dc.date.accessioned2024-01-19T18:31:31Z-
dc.date.available2024-01-19T18:31:31Z-
dc.date.created2021-09-05-
dc.date.issued2020-01-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/119139-
dc.description.abstractThe thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell (C/S) nanowires grown by the method of on-film formation of nanowires were systematically investigated. The electrical conductivity and Seebeck coefficient of nanowires with different diameters were measured as a function of the temperature. The contribution of Sn and Sb shells to the total transport in the C/S nanowires was determined using analytical fitting based on the parallel combination of the conducive system model. The carrier-interface boundary scattering at the C/S interface was quantitatively evaluated as the sheet resistance. In addition, the effect of hole doping on the transport properties was also observed in the Bi/Sn C/S nanowires.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectFIGURE-OF-MERITS-
dc.subjectTHERMAL-CONDUCTIVITY-
dc.subjectELECTRICAL-RESISTIVITY-
dc.subjectPOWER FACTOR-
dc.subjectSILICON-
dc.subjectBISMUTH-
dc.subjectREDUCTION-
dc.subjectSTRAIN-
dc.titleRadial heterostructure and interface effects on thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell nanowires-
dc.typeArticle-
dc.identifier.doi10.1016/j.cap.2019.10.007-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.20, no.1, pp.43 - 48-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume20-
dc.citation.number1-
dc.citation.startPage43-
dc.citation.endPage48-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART002553353-
dc.identifier.wosid000496996300008-
dc.identifier.scopusid2-s2.0-85073026172-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIGURE-OF-MERITS-
dc.subject.keywordPlusTHERMAL-CONDUCTIVITY-
dc.subject.keywordPlusELECTRICAL-RESISTIVITY-
dc.subject.keywordPlusPOWER FACTOR-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusBISMUTH-
dc.subject.keywordPlusREDUCTION-
dc.subject.keywordPlusSTRAIN-
dc.subject.keywordAuthorCore/shell nanowires-
dc.subject.keywordAuthorOn-film formation of nanowires-
dc.subject.keywordAuthorHeterostructure-
dc.subject.keywordAuthorInterface-
dc.subject.keywordAuthorThermoelectric-
dc.subject.keywordAuthorSeebeck coefficient-
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