Superhard SiC thin films with a microstructure of nanocolumnar crystalline grains and an amorphous intergranular phase

Authors
Lim, K.-W.Sim, Y.-S.Huh, J.-Y.Park, J.-K.Lee, W.-S.Baik, Y.-J.
Issue Date
2019-11
Publisher
Corrosion Science Society of Korea
Citation
Corrosion Science and Technology, v.18, no.5, pp.206 - 211
Abstract
Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and 450°C. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of 450°C in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples’ structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive. ? 2019 Corrosion Science Society of Korea. All Rights Reserved.
Keywords
Amorphous matrix phase; Hardness; Nanocolumnar crystalline grain; Nanocomposite structure; Silicon carbide
ISSN
1598-6462
URI
https://pubs.kist.re.kr/handle/201004/119421
DOI
10.14773/CST.2019.18.5.206
Appears in Collections:
KIST Article > 2019
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