Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode

Authors
Kim, Seong KwangGeum, Dae-MyeongLim, Hyeong-RakKim, HansungHan, Jae-HoonHwang, Do KyungSong, Jin DongKim, Hyung-junKim, Sanghyeon
Issue Date
2019-09-30
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.115, no.14
Abstract
In this work, we fabricated n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with a metal-oxide-semiconductor (MOS) interface of Y2O3/In0.53Ga0.47As. We investigated interfacial properties of the gate stack through the H-2 ambient annealing process in MOSCAPs. We obtained an extremely low interface trap density of D-it = 1.8 x 10(11) cm(-2) eV(-1). We compared the H-2 annealing effect in different gate electrode materials of Ni and Pt. We determined that the Pt electrode was effective in maximizing the impact of H-2 annealing. Also, we fabricated In0.53Ga0.47As-on-insulator MOS field-effect-transistors using an optimized annealing process, which showed more stable electrical characteristics than devices through the N-2 ambient annealing process.
Keywords
FIELD-EFFECT TRANSISTORS; IMPACT; OXIDATION; MECHANISM; MOBILITY; MOSFETS; FIELD-EFFECT TRANSISTORS; IMPACT; OXIDATION; MECHANISM; MOBILITY; MOSFETS; MOS interface; InGaAs FET; gate electrode
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/119548
DOI
10.1063/1.5111377
Appears in Collections:
KIST Article > 2019
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