Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T '-WSe2

Authors
Pedramrazi, ZahraHerbig, CharlottePulkin, ArtemTang, ShujiePhillips, MadeleineWong, DillonRyu, HyejinPizzochero, MicheleChen, YiWang, FengMele, Eugene J.Shen, Zhi-XunMo, Sung-KwanYazyev, Oleg V.Crommie, Michael F.
Issue Date
2019-08
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.19, no.8, pp.5634 - 5639
Abstract
We report the creation and manipulation of structural phase boundaries in the single-layer quantum spin Hall insulator 1T'-WSe2 by means of scanning tunneling microscope tip pulses. We observe the formation of one-dimensional interfaces between topologically nontrivial 1T' domains having different rotational orientations, as well as induced interfaces between topologically nontrivial 1T' and topologically trivial 1H phases. Scanning tunneling spectroscopy measurements show that 1T'/1T' interface states are localized at domain boundaries, consistent with theoretically predicted unprotected interface modes that form dispersive bands in and around the energy gap of this quantum spin Hall insulator. We observe a qualitative difference in the experimental spectral line shape between topologically "unprotected" states at 1T'/IT' domain boundaries and protected states at 1T'/1H and 1T'/vacuum boundaries in single-layer WSe2.
Keywords
PHASE-TRANSITION; MONOLAYER; RESISTANCE; PHASE-TRANSITION; MONOLAYER; RESISTANCE; Scanning tunneling microscopy; transition metal dichalcogenides; quantum spin hall insulators; domain boundary; ferroelasticity
ISSN
1530-6984
URI
https://pubs.kist.re.kr/handle/201004/119729
DOI
10.1021/acs.nanolett.9b02157
Appears in Collections:
KIST Article > 2019
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