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dc.contributor.authorYuan, Yuan-
dc.contributor.authorJung, Daehwan-
dc.contributor.authorSun, Keye-
dc.contributor.authorZheng, Jiyuan-
dc.contributor.authorJones, Andrew H.-
dc.contributor.authorBowers, John E.-
dc.contributor.authorCampbell, Joe C.-
dc.date.accessioned2024-01-19T19:33:15Z-
dc.date.available2024-01-19T19:33:15Z-
dc.date.created2021-09-02-
dc.date.issued2019-07-15-
dc.identifier.issn0146-9592-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/119772-
dc.description.abstractWe demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k similar to 0.2 as InAlAs APDs on InP. (C) 2019 Optical Society of America-
dc.languageEnglish-
dc.publisherOPTICAL SOC AMER-
dc.titleIII-V on silicon avalanche photodiodes by heteroepitaxy-
dc.typeArticle-
dc.identifier.doi10.1364/OL.44.003538-
dc.description.journalClass1-
dc.identifier.bibliographicCitationOPTICS LETTERS, v.44, no.14, pp.3538 - 3541-
dc.citation.titleOPTICS LETTERS-
dc.citation.volume44-
dc.citation.number14-
dc.citation.startPage3538-
dc.citation.endPage3541-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000475678500032-
dc.identifier.scopusid2-s2.0-85069615631-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalResearchAreaOptics-
dc.type.docTypeArticle-
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