Influence of interface defects on the optical properties of InP/ZnS quantum dots by low temperature synthesis of InP core

Authors
Jeong, Da-WoonSeo, Han WookByun, Young TaeLim, Kyoung-MookJeon, Eun JuKim, Bum Sung
Issue Date
2019-05-15
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v.476, pp.757 - 760
Abstract
We present a series of investigations focused on the effect of synthesis temperature on the optical characteristics of InP/ZnS QDs. Absorption spectra confirmed the successful synthesis of InP QDs under a temperature as low as 140 degrees C. Because of the poor optical characteristics possibly caused by the inherently high defect states on the surface of InP QDs, a modified ZnS shell overcoating was applied on the InP QDs. An InP core synthesized at a relatively low temperature of 160 degrees C or less is presumed to possess fewer surface defects; this was confirmed as a reduction in the red-shift due to the shell coating. A satisfactory quantum yield of 52% was obtained from the InP/ZnS QDs synthesized at a reaction temperature and reaction time of 140 degrees C and 20 h, respectively, with the ZnS shell coating. Thus, we successfully synthesized InP/ZnS QDs using an InP core synthesized at a low temperature of 140 degrees C through our suggested shell coating process.
Keywords
ONE-POT SYNTHESIS; INAS NANOCRYSTALS; TOXICITY; SE; ONE-POT SYNTHESIS; INAS NANOCRYSTALS; TOXICITY; SE; Quantum dots; QDs; InP; InP/ZnS; Surface defects
ISSN
0169-4332
URI
https://pubs.kist.re.kr/handle/201004/119993
DOI
10.1016/j.apsusc.2019.01.067
Appears in Collections:
KIST Article > 2019
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