1.3-mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

Abstract

This letter reports on a 1.3-mu m reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with -7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.