Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeon, Dae-Young | - |
dc.contributor.author | Lee, Dong Su | - |
dc.contributor.author | Lee, Seoung-Ki | - |
dc.contributor.author | Park, Min | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2024-01-19T22:31:19Z | - |
dc.date.available | 2024-01-19T22:31:19Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/121212 | - |
dc.description.abstract | Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (D-max), and the impact of series resistance (R-sd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2018.2836345 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3050 - 3053 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 65 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 3050 | - |
dc.citation.endPage | 3053 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000435546700054 | - |
dc.identifier.scopusid | 2-s2.0-85047643588 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | 2-D transition-metal dichalcogenides (TMDs) | - |
dc.subject.keywordAuthor | bulk channel mobility | - |
dc.subject.keywordAuthor | maximum depletion width | - |
dc.subject.keywordAuthor | partially depleted (PD) | - |
dc.subject.keywordAuthor | series resistance | - |
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