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dc.contributor.authorJeon, Dae-Young-
dc.contributor.authorLee, Dong Su-
dc.contributor.authorLee, Seoung-Ki-
dc.contributor.authorPark, Min-
dc.contributor.authorPark, So Jeong-
dc.contributor.authorKim, Gyu-Tae-
dc.date.accessioned2024-01-19T22:31:19Z-
dc.date.available2024-01-19T22:31:19Z-
dc.date.created2021-09-03-
dc.date.issued2018-07-
dc.identifier.issn0018-9383-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/121212-
dc.description.abstractElectrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (D-max), and the impact of series resistance (R-sd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleExtraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors-
dc.typeArticle-
dc.identifier.doi10.1109/TED.2018.2836345-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3050 - 3053-
dc.citation.titleIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.volume65-
dc.citation.number7-
dc.citation.startPage3050-
dc.citation.endPage3053-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000435546700054-
dc.identifier.scopusid2-s2.0-85047643588-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthor2-D transition-metal dichalcogenides (TMDs)-
dc.subject.keywordAuthorbulk channel mobility-
dc.subject.keywordAuthormaximum depletion width-
dc.subject.keywordAuthorpartially depleted (PD)-
dc.subject.keywordAuthorseries resistance-
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