Low-Temperature-Processed SiOx One Diode-One Resistor Crossbar Array and Its Flexible Memory Application

Abstract

The one diode-one resistor (1D-1R) crossbar array is a promising architecture for high-density memory due to its excellent scalability and effective suppression of the sneak paths arising from the unselected neighboring cells. In particular, the low-temperature fabrication process plays an important role in the demonstration of the 1D-1R device, affording compatibility with conventional semiconductor processes, as well as flexible memory applications. In this study, a 1D-1R crossbar memory array consisting of a nanoporous SiOx film and an oxide-based diode is achieved using physical vapor deposition methods at low temperature. The fabricated devices show reliable memory operation with high rectification and on/off resistance ratios under low power consumption. In addition, the low-temperature process enables the fabrication of a flexible 1D-1R crossbar memory array on a plastic substrate. The observed uniform and stable memory performance of the flexible device under mechanical deformation establishes the feasibility of this platform for future high-density flexible nonvolatile memory applications.