Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)

Authors
Lee, Mi JungLee, SangikLee, SungminBalamurugan, K.Yoon, ChansooJang, Jun TaeKim, Sung-HoonKwon, Deok-HwangKim, MiyoungAhn, Jae-PyoungKim, Dae HwanPark, Je-GeunPark, Bae Ho
Issue Date
2018-04-02
Publisher
NATURE PUBLISHING GROUP
Citation
NPG ASIA MATERIALS, v.10
Abstract
Two-dimensional (2D) van der Waals (vdW) materials have recently attracted considerable attention due to their excellent electrical and mechanical properties. TmPSx (where Tm = a transition metal), which is a new class of 2D vdW materials, is expected to show various physical phenomena depending on the Tm used. In this paper, the unprecedented synaptic behavior of a vertical Ag/CrPS4/Au capacitor structure, where CrPS4 is a single-crystalline 2D vdW layer, is reported. Multi-stable resistive states were obtained using an external voltage of less than 0.3 V. Both short-term plasticity and long-term potentiation were observed by controlling the interval of the external voltage pulse. Simple mechanical exfoliation was used to develop a synaptic device based on a very thin CrPS4 layer with a thickness of similar to 17 nm. Therefore, it was demonstrated that vertical Ag/CrPS4/Au capacitors could be promising inorganic synaptic devices compatible with next-generation, flexible neuromorphic technologies.
Keywords
PLASTICITY; SWITCHES; IMPACT; FILM; PLASTICITY; SWITCHES; IMPACT; FILM
ISSN
1884-4049
URI
https://pubs.kist.re.kr/handle/201004/121496
DOI
10.1038/s41427-018-0016-7
Appears in Collections:
KIST Article > 2018
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