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dc.contributor.authorJeon, Dae-Young-
dc.contributor.authorPark, So Jeong-
dc.contributor.authorMouis, Mireille-
dc.contributor.authorBarraud, Sylvain-
dc.contributor.authorKim, Gyu-Tae-
dc.contributor.authorGhibaudo, Gerard-
dc.date.accessioned2024-01-19T23:30:17Z-
dc.date.available2024-01-19T23:30:17Z-
dc.date.created2021-09-03-
dc.date.issued2018-03-
dc.identifier.issn0038-1101-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/121656-
dc.description.abstractOperation mode dependent series resistance (R-sd) behavior of junctionless transistors (JLTs) has been discussed in detail. R-sd was increased for decreasing gate bias in bulk conduction regime, while a constant value of R-sd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted R-sd. This work provides key information for a better understanding of JLT operation affected by R-sd effects with different state of conduction channel.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectNANOWIRE TRANSISTORS-
dc.subjectPARAMETER EXTRACTION-
dc.titleSeries resistance in different operation regime of junctionless transistors-
dc.typeArticle-
dc.identifier.doi10.1016/j.sse.2017.12.013-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID-STATE ELECTRONICS, v.141, pp.92 - 95-
dc.citation.titleSOLID-STATE ELECTRONICS-
dc.citation.volume141-
dc.citation.startPage92-
dc.citation.endPage95-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000425491200014-
dc.identifier.scopusid2-s2.0-85041462380-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusNANOWIRE TRANSISTORS-
dc.subject.keywordPlusPARAMETER EXTRACTION-
dc.subject.keywordAuthorJunctionless transistors (JLTs)-
dc.subject.keywordAuthorSeries resistance (R-sd)-
dc.subject.keywordAuthorBulk channel-
dc.subject.keywordAuthorAccumulation channel-
dc.subject.keywordAuthorNumerical simulation and temperature dependence-
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