Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ju, Gunwu | - |
dc.contributor.author | Na, Byung Hoon | - |
dc.contributor.author | Park, Kwangwook | - |
dc.contributor.author | Hwang, Hyeong-Yong | - |
dc.contributor.author | Jho, Young-Dahl | - |
dc.contributor.author | Myoung, NoSoung | - |
dc.contributor.author | Yim, Sang-Youp | - |
dc.contributor.author | Kim, Hyung-jun | - |
dc.contributor.author | Lee, Yong Tak | - |
dc.date.accessioned | 2024-01-19T23:30:29Z | - |
dc.date.available | 2024-01-19T23:30:29Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/121667 | - |
dc.description.abstract | We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps. (C) 2018 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | REFRACTIVE-INDEX CHANGE | - |
dc.subject | TEMPERATURE-DEPENDENCE | - |
dc.subject | LOW-VOLTAGE | - |
dc.subject | ELECTRIC-FIELD | - |
dc.subject | ABSORPTION | - |
dc.subject | DYNAMICS | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | ELECTROABSORPTION | - |
dc.subject | ENHANCEMENT | - |
dc.subject | MODULATORS | - |
dc.title | Suppressing nonradiative recombination in crown-shaped quantum wells | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/JJAP.57.030305 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.57, no.3 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 57 | - |
dc.citation.number | 3 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000424470000003 | - |
dc.identifier.scopusid | 2-s2.0-85042654036 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | REFRACTIVE-INDEX CHANGE | - |
dc.subject.keywordPlus | TEMPERATURE-DEPENDENCE | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | DYNAMICS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | ELECTROABSORPTION | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | MODULATORS | - |
dc.subject.keywordAuthor | quantum well | - |
dc.subject.keywordAuthor | GaAs | - |
dc.subject.keywordAuthor | recombination | - |
dc.subject.keywordAuthor | crown-shaped | - |
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