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dc.contributor.authorLee, Jin-Hyung-
dc.contributor.authorCho, Il-Joo-
dc.contributor.authorKo, Kyungmin-
dc.contributor.authorYoon, Eui-Sung-
dc.contributor.authorPark, Hyung-Ho-
dc.contributor.authorKim, Tae Song-
dc.date.accessioned2024-01-20T01:03:30Z-
dc.date.available2024-01-20T01:03:30Z-
dc.date.created2021-09-05-
dc.date.issued2017-07-
dc.identifier.issn0946-7076-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/122570-
dc.description.abstractWe propose a new flexible piezoelectric micromachined ultrasonic transducer (pMUT) array integrated on flexible polydimethylsiloxane (PDMS) that can be used in studying brain stimulation by ultrasound. To achieve the technical demands of a high sound pressure level and flexibility, a diaphragm-type piezoelectric ultrasound transducer array was manufactured with 55 mu m-thick bulk lead zirconate titanate (PZT) that was thinned after bonding with a silicon wafer. The ultrasound transducer array was then strongly bonded onto a PDMS substrate using an oxygen-plasma treatment followed by precise dicing with a fixed pitch to achieve flexibility. The radius of curvature was smaller than 5 mm, which is sufficient for attachment to the surface of a mouse brain. After a thinning process for the PZT layer, we observed that the PZT layer still maintained a high ferroelectric property. The measured remnant polarization (P-r) and coercive field (E-c) were 28.26 mu C/cm(2) and 79 kV/cm, respectively. The resonant frequencies of fabricated pMUT elements with different membrane sizes of 700, 800, 900, 1200 mu m in diameter were measured to be 694.4, 565.4, 430.8, and 289.3 kHz, respectively. By measuring the ultrasound output pressure, a pMUT showed a sound intensity (I-sppa) of 44 mW/cm(2) at 80 V, which is high enough for low-intensity ultrasound brain stimulation.-
dc.languageEnglish-
dc.publisherSPRINGER HEIDELBERG-
dc.titleFlexible piezoelectric micromachined ultrasonic transducer (pMUT) for application in brain stimulation-
dc.typeArticle-
dc.identifier.doi10.1007/s00542-016-2912-5-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, v.23, no.7, pp.2321 - 2328-
dc.citation.titleMICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS-
dc.citation.volume23-
dc.citation.number7-
dc.citation.startPage2321-
dc.citation.endPage2328-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000404149800001-
dc.identifier.scopusid2-s2.0-84964579505-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
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KIST Article > 2017
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