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dc.contributor.authorLee, Jaehyun-
dc.contributor.authorKim, Seungchul-
dc.contributor.authorShin, Mincheol-
dc.date.accessioned2024-01-20T01:30:21Z-
dc.date.available2024-01-20T01:30:21Z-
dc.date.created2021-09-05-
dc.date.issued2017-06-05-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/122641-
dc.description.abstractIn this work, we have performed the first-principles calculations to investigate the Schottky barrier height (SBH) of various nanostructured silicide-silicon junctions. As for the silicides, PtSi, NiSi, TiSi2, and YSi2 have been used. We find that E-FiF = E-Fi -E-F, where E-Fi and E-F are the intrinsic Fermi level of the semiconductor part and the Fermi level of the junction, respectively, is unchanged by nanostructuring. From this finding, we suggest a model, a symmetric increase of the SBH (SI) model, to properly predict SBHs of nanostructured silicide-silicon junctions. We also suggest two measurable quantities for the experimental validation of our model. The effect of our SI model applied to nanostructures such as nanowires and ultra-thin-bodies is compared with that of the widely used previous SBH model. Published by AIP Publishing.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectTHIN-BODY-
dc.subjectTRANSISTORS-
dc.subjectINTERFACES-
dc.subjectSI-
dc.subjectPERFORMANCE-
dc.subjectCONTACTS-
dc.subjectSI(100)-
dc.subjectMOSFETS-
dc.subjectSYSTEMS-
dc.titleA theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction-
dc.typeArticle-
dc.identifier.doi10.1063/1.4985013-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.110, no.23-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume110-
dc.citation.number23-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000403347700036-
dc.identifier.scopusid2-s2.0-85020405022-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusTHIN-BODY-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordPlusSI-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusSYSTEMS-
dc.subject.keywordAuthorSchottky Barrier-
dc.subject.keywordAuthorNanostructure-
dc.subject.keywordAuthorDensity Functional Theory-
dc.subject.keywordAuthorSimulation-
dc.subject.keywordAuthorBand gap-
dc.subject.keywordAuthorSBH model-
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KIST Article > 2017
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