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dc.contributor.authorJun, Dong-Hwan-
dc.contributor.authorJeong, Hae Yong-
dc.contributor.authorKim, Youngjo-
dc.contributor.authorShin, Chan-Soo-
dc.contributor.authorPark, Kyung Ho-
dc.contributor.authorPark, Won-Kyu-
dc.contributor.authorKim, Min-Su-
dc.contributor.authorKim, Sangin-
dc.contributor.authorHan, Sang Wook-
dc.contributor.authorMoon, Sung-
dc.date.accessioned2024-01-20T03:04:27Z-
dc.date.available2024-01-20T03:04:27Z-
dc.date.created2021-09-05-
dc.date.issued2016-10-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/123600-
dc.description.abstractIn this paper, a p-type diffusion process based literally on single-step metal-organic vapor-phase diffusion (MOVPD) employing diethyl zinc as the diffusion source in combination with the recessetching technique is developed to improve the dark-current characteristics of planar-type avalanche photodiodes (APDs). The developed single-step MOVPD process exhibits on excellent linear relationship between the diffusion depth and the square root of the diffusion time, which mainly results from maintaining constant source diffusion. The single-step MOVPD process without any additional thermal activation process achieves a surface doping concentration of 1.9 x 10(18) cm (-3), which is sufficient to form ohmic contact. The measured diffusion profiles of the APDs clearly reveal the presence of a two-dimensional diffusion front formed by the recess-etched and guard-ring regions. The impact of this p-type diffusion process on the performance of the APD devices has also been demonstrated by exhibiting improved dark-current characteristics for the fabricated APDs.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectZN DIFFUSION-
dc.subjectPHOTON DETECTION-
dc.subjectINP-
dc.subjectINGAAS/INP-
dc.subjectDIODES-
dc.titleSingle-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes-
dc.typeArticle-
dc.identifier.doi10.3938/jkps.69.1341-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.69, no.8, pp.1341 - 1346-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume69-
dc.citation.number8-
dc.citation.startPage1341-
dc.citation.endPage1346-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART002162924-
dc.identifier.wosid000387383700011-
dc.identifier.scopusid2-s2.0-85013906023-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusZN DIFFUSION-
dc.subject.keywordPlusPHOTON DETECTION-
dc.subject.keywordPlusINP-
dc.subject.keywordPlusINGAAS/INP-
dc.subject.keywordPlusDIODES-
dc.subject.keywordAuthorPhotodiodes-
dc.subject.keywordAuthorIII-V materials-
dc.subject.keywordAuthordiffusion-
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