InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror

Authors
Yun, Ye SeulKim, SangHyeonRyu, Han-YoulPark, Min-SuJang, HojinSong, Jong HanLim, Weon CheolChang, Young JunChoi, Won Jun
Issue Date
2016-09
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.16, no.9, pp.1005 - 1008
Abstract
We report a proton irradiation-induced intermixing on InGaAs/GaAs quantum well (QW) heterostructures with thick upper cladding layers. Proton irradiation was performed with different dose, followed with annealing. Proton irradiated and annealed sample shows the blue-shift of the photoluminescence (PL) spectra and the blue-shift energy was increased up to about 30 meV with increasing dose, but was insensitive to the annealing temperature. Finally, we calculated that the relative absorption coefficient at the laser wavelength for the irradiated sample with dose of 1 x 10(16)/cm(2) was 0.045, suggesting such proton irradiation-induced intermixing is a promising approach for fabricating non-absorbing mirror. (C) 2016 Elsevier B.V. All rights reserved.
Keywords
HIGH-POWER; LASER-DIODES; FABRICATION; INTEGRATION; OPERATION; HIGH-POWER; LASER-DIODES; FABRICATION; INTEGRATION; OPERATION; Quantum well intermixing; Non-absorbing mirror; Proton irradiation
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/123732
DOI
10.1016/j.cap.2016.05.023
Appears in Collections:
KIST Article > 2016
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