InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror
- Authors
- Yun, Ye Seul; Kim, SangHyeon; Ryu, Han-Youl; Park, Min-Su; Jang, Hojin; Song, Jong Han; Lim, Weon Cheol; Chang, Young Jun; Choi, Won Jun
- Issue Date
- 2016-09
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.9, pp.1005 - 1008
- Abstract
- We report a proton irradiation-induced intermixing on InGaAs/GaAs quantum well (QW) heterostructures with thick upper cladding layers. Proton irradiation was performed with different dose, followed with annealing. Proton irradiated and annealed sample shows the blue-shift of the photoluminescence (PL) spectra and the blue-shift energy was increased up to about 30 meV with increasing dose, but was insensitive to the annealing temperature. Finally, we calculated that the relative absorption coefficient at the laser wavelength for the irradiated sample with dose of 1 x 10(16)/cm(2) was 0.045, suggesting such proton irradiation-induced intermixing is a promising approach for fabricating non-absorbing mirror. (C) 2016 Elsevier B.V. All rights reserved.
- Keywords
- HIGH-POWER; LASER-DIODES; FABRICATION; INTEGRATION; OPERATION; HIGH-POWER; LASER-DIODES; FABRICATION; INTEGRATION; OPERATION; Quantum well intermixing; Non-absorbing mirror; Proton irradiation
- ISSN
- 1567-1739
- URI
- https://pubs.kist.re.kr/handle/201004/123732
- DOI
- 10.1016/j.cap.2016.05.023
- Appears in Collections:
- KIST Article > 2016
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