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dc.contributor.authorJi, Yongsung-
dc.contributor.authorYang, Yang-
dc.contributor.authorLee, Seoung-Ki-
dc.contributor.authorRuan, Gedeng-
dc.contributor.authorKim, Tae-Wook-
dc.contributor.authorFei, Huilong-
dc.contributor.authorLee, Seung-Hoon-
dc.contributor.authorKim, Dong-Yu-
dc.contributor.authorYoon, Jongwon-
dc.contributor.authorTour, James M.-
dc.date.accessioned2024-01-20T03:34:23Z-
dc.date.available2024-01-20T03:34:23Z-
dc.date.created2021-09-04-
dc.date.issued2016-08-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/123836-
dc.description.abstractFlexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high I-ON/IOFF ratio of similar to 10(5). The device also showed stable retention time over 5 X 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when maximum bending conditions.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectRESISTANCE SWITCHING CHARACTERISTICS-
dc.subjectMEMRISTIVE DEVICES-
dc.subjectTHIN-FILM-
dc.subjectNANOSHEETS-
dc.subjectEVOLUTION-
dc.subjectRERAM-
dc.titleFlexible Nanoporous WO3-x Nonvolatile Memory Device-
dc.typeArticle-
dc.identifier.doi10.1021/acsnano.6b02711-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS NANO, v.10, no.8, pp.7598 - 7603-
dc.citation.titleACS NANO-
dc.citation.volume10-
dc.citation.number8-
dc.citation.startPage7598-
dc.citation.endPage7603-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000381959100042-
dc.identifier.scopusid2-s2.0-84983399558-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusRESISTANCE SWITCHING CHARACTERISTICS-
dc.subject.keywordPlusMEMRISTIVE DEVICES-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusNANOSHEETS-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordPlusRERAM-
dc.subject.keywordAuthorresistive random access memory-
dc.subject.keywordAuthorflexible memory-
dc.subject.keywordAuthorWO3-x memory-
dc.subject.keywordAuthornanoporous-
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