Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Soni, Rohit | - |
dc.contributor.author | Petraru, Adrian | - |
dc.contributor.author | Nair, Harikrishnan S. | - |
dc.contributor.author | Vavra, Ondrej | - |
dc.contributor.author | Ziegler, Martin | - |
dc.contributor.author | Kim, Seong Keun | - |
dc.contributor.author | Jeong, Doo Seok | - |
dc.contributor.author | Kohlstedt, Hermann | - |
dc.date.accessioned | 2024-01-20T04:31:03Z | - |
dc.date.available | 2024-01-20T04:31:03Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/124143 | - |
dc.description.abstract | A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb (Zr0.3Ti0.7)O-3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | ELECTRORESISTANCE | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | MECHANISMS | - |
dc.title | Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c6nr01277a | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.8, no.20, pp.10799 - 10805 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 8 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 10799 | - |
dc.citation.endPage | 10805 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000377140700036 | - |
dc.identifier.scopusid | 2-s2.0-84971299632 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRORESISTANCE | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | MECHANISMS | - |
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