A new rigid planar low band gap PTTDPP-DT-DTT polymer for organic transistors and performance improvement through the use of a binary solvent system
- Authors
- Kim, Min Je; Choi, Jong Yong; An, Gukil; Kim, Hyunjung; Kang, Youngjong; Kim, Jai Kyeong; Son, Hae Jung; Lee, Jung Heon; Cho, Jeong Ho; Kim, BongSoo
- Issue Date
- 2016-03
- Publisher
- ELSEVIER SCI LTD
- Citation
- DYES AND PIGMENTS, v.126, pp.138 - 146
- Abstract
- We report the synthesis of a new low band gap planar polymer of poly(2,5-bis(2-decyltetradecyl)-3-(5-(dithieno[3,2-b:2',3'-d]thiophen-2-yl)thieno[3,2-b]thiophen-2-y1)-6-(thieno[3,2-b]thiophen-2-y1)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (PTTDPP-DT-DTT) for use in organic thin film transistors (OTFTs). The polymer backbone is highly planar and well-conjugated, facilitating interchain stacking. The PTTDPP-DT-DTT-based OTFTs were fabricated and carrier mobilities were improved by using a binary solvent system: chloroform (CF):toluene (Tol), CF:chlorobenzene (CB), and CF:o-dichlorobenzene (DCB). The addition of higher boiling point solvents promoted film crystallinity with more edge-on orientations. Thus, the use of CF:DCB yielded the highest carrier mobility obtained among the devices tested. Thermal annealing further enhanced the mobility of the CF:DCB device. Atomic force microscopy images disclosed the most fibrous feature in the thermally annealed polymer film cast from CF:DCB solution. This work highlights that both the proper selection of a binary solvent and thermal annealing can manage film morphology of rigid planar conjugated polymer semiconductors effectively for high-performance OTFTs. (C) 2015 Elsevier Ltd. All rights reserved.
- Keywords
- FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-MOBILITY; SEMICONDUCTING POLYMERS; CONJUGATED POLYMERS; HIGH HOLE; COPOLYMERS; TRANSPORT; ELECTRON; PACKING; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-MOBILITY; SEMICONDUCTING POLYMERS; CONJUGATED POLYMERS; HIGH HOLE; COPOLYMERS; TRANSPORT; ELECTRON; PACKING; Organic thin film transistor; Low band gap semiconducting polymer; High carrier mobility; Binary solvent; Film crystallinity; Thermal annealing
- ISSN
- 0143-7208
- URI
- https://pubs.kist.re.kr/handle/201004/124354
- DOI
- 10.1016/j.dyepig.2015.11.022
- Appears in Collections:
- KIST Article > 2016
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