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dc.contributor.authorYang, Hee Yeon-
dc.contributor.authorYun, Dong Yeol-
dc.contributor.authorKim, Yu Na-
dc.contributor.authorHong, Jae Min-
dc.contributor.authorKim, Tae Whan-
dc.date.accessioned2024-01-20T05:01:47Z-
dc.date.available2024-01-20T05:01:47Z-
dc.date.created2022-01-25-
dc.date.issued2016-02-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/124418-
dc.description.abstractNonvolatile memory devices based on a polydopamine (PDA) layer were fabricated by using a dip-coating process. Atomic force microscopy images revealed that the PDA layer had a conformal surface. The energy dispersive X-ray data showed the atomic stoichiometry of nitrogen and carbon in the PDA layer. The capacitance-voltage (C-V) curves of the Al/PDA/n-Si memory devices at 300 K showed a hysteresis with a large flat band shift, indicating that the incomplete PDA layer acted as a charge storage in the memory device. The switching mechanisms for the writing and erasing processes for the Al/PDA/n-Si devices are described on the basis of the C-V results and the energy band diagrams.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleSwitching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer-
dc.typeArticle-
dc.identifier.doi10.1166/jnn.2016.11967-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.2, pp.1685 - 1688-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume16-
dc.citation.number2-
dc.citation.startPage1685-
dc.citation.endPage1688-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000372358800075-
dc.identifier.scopusid2-s2.0-84959422546-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusSENSITIZED SOLAR-CELLS-
dc.subject.keywordPlusFLOATING-GATE-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusCOATINGS-
dc.subject.keywordPlusNANOCOMPOSITES-
dc.subject.keywordPlusSURFACES-
dc.subject.keywordAuthorNonvolatile Memory Device-
dc.subject.keywordAuthorPolydopamine-
dc.subject.keywordAuthorSwitching Mechanism-
dc.subject.keywordAuthorCapacitance-Voltage-
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KIST Article > 2016
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