Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions

Authors
Park, Young RanKim, Hyeong JinIm, SungjinSeo, SunaeShin, KooChoi, Won KookHong, Young Joon
Issue Date
2016-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.108, no.2
Abstract
We report the tailoring of the electronic structure of poly(N-vinylcarbazole) (PVK) using a mixture layer of polyaniline: poly(p-styrenesulfonic acid) (PANI:PSS) in organic multilayer PVK/PANI: PSS/poly(3,4-ethylenedioxythiophene):PSS heterojunctions. The overall electronic structure of the PVK overlayer was systematically down-shifted while the work function of PANI: PSS increased as a function of the PSS-to-PANI weight ratio for the ratio range from 1 to 11 in the PANI: PSS film. The down-shift in the highest occupied molecular orbital of PVK markedly reduced the hole injection barrier from PVK to quantum-dot (QD) layers in QD-light emitting diode (QD-LED) structures, resulting in superior electrical and electroluminescent characteristics for QD-LEDs. The influences of PANI: PSS thickness on the electronic structure of PVK and the performance of QD-LEDs are also discussed. (C) 2016 AIP Publishing LLC.
Keywords
LIGHT-EMITTING-DIODES; ELECTRONIC-STRUCTURE; QUANTUM DOTS; EFFICIENT; POLYMER; DEVICES; INTERFACES; ORIENTATION; MORPHOLOGY; INJECTION
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/124524
DOI
10.1063/1.4939910
Appears in Collections:
KIST Article > 2016
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