Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, Albert S. | - |
dc.contributor.author | Choi, Seung-Sock | - |
dc.contributor.author | Oh, Sung Yeoun | - |
dc.contributor.author | Lee, He Seung | - |
dc.contributor.author | Kim, Bomin | - |
dc.contributor.author | Hwang, Seung Sang | - |
dc.contributor.author | Baek, Kyung-Youl | - |
dc.date.accessioned | 2024-01-20T05:34:44Z | - |
dc.date.available | 2024-01-20T05:34:44Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/124821 | - |
dc.description.abstract | Poly(methyl) silsesquioxane-based spin-on-glass resins incorporating both a cyclic precursor, 1,3,5,7-tetramethyl 1,3,5,7-tetrahydroxyl cyclosiloxane, and incompletely condensed methyl-substituted POSS were synthesized and their thermal, mechanical, and electrical properties were investigated as a function of the POSS loading content. By introducing incompletely condensed methyl-substituted POSS compounds at the molecular level as sol-gel precursors, exceptional thermal stability (4700 degrees C), good mechanical properties (elastic modulus >4.0 GPa), and an ultra-low dielectric constant (k = 1.8) were obtained. In addition to providing a new route towards fully poly(methyl) silsesquioxane-based spin-on-glass resins with the above properties, the realization of the application of integration circuits was evaluated to show that the ultra low-k, mechanically robust spin-on-glass materials were able to withstand harsh wet chemical and dry etching, as well as chemical mechanical planarization (CMP) processing. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | POLYHEDRAL OLIGOSILSESQUIOXANES | - |
dc.subject | POLYSILSESQUIOXANES | - |
dc.subject | SILSESQUIOXANES | - |
dc.title | Incompletely condensed POSS-based spin-on-glass networks for impeccable ultra low-k integration | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c5tc02683k | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.44, pp.11605 - 11611 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 3 | - |
dc.citation.number | 44 | - |
dc.citation.startPage | 11605 | - |
dc.citation.endPage | 11611 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000364826000006 | - |
dc.identifier.scopusid | 2-s2.0-84946567876 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | POLYHEDRAL OLIGOSILSESQUIOXANES | - |
dc.subject.keywordPlus | POLYSILSESQUIOXANES | - |
dc.subject.keywordPlus | SILSESQUIOXANES | - |
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