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dc.contributor.authorKim, Jeong-Gil-
dc.contributor.authorWon, Chul-Ho-
dc.contributor.authorKim, Do-Kywn-
dc.contributor.authorJo, Young-Woo-
dc.contributor.authorLee, Jun-Hyeok-
dc.contributor.authorKim, Yong-Tae-
dc.contributor.authorCristoloveanu, Sorin-
dc.contributor.authorLee, Jung-Hee-
dc.date.accessioned2024-01-20T06:02:08Z-
dc.date.available2024-01-20T06:02:08Z-
dc.date.created2021-09-05-
dc.date.issued2015-10-
dc.identifier.issn1598-1657-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/124925-
dc.description.abstractWe have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to 1070 degrees C, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of 800 degrees C exhibited best Hall measurement results; such as sheet resistance of 215 Omega/square, electron mobility of 1430 cm(2)/V.s, and two-dimensional electron gas (2DEG) density of 2.04 x 1013 /cm(2). The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of 0.2 mu m exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.-
dc.languageEnglish-
dc.publisherIEEK PUBLICATION CENTER-
dc.titleGrowth of AlN/GaN HEMT structure Using Indium-surfactant-
dc.typeArticle-
dc.identifier.doi10.5573/JSTS.2015.15.5.490-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.5, pp.490 - 496-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume15-
dc.citation.number5-
dc.citation.startPage490-
dc.citation.endPage496-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART002044041-
dc.identifier.wosid000366061700009-
dc.identifier.scopusid2-s2.0-84945949458-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorAlN/GaN heterostructure-
dc.subject.keywordAuthorindium surfactant-
dc.subject.keywordAuthorHEMT-
dc.subject.keywordAuthorhall measurement-
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