Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Jeong-Gil | - |
dc.contributor.author | Won, Chul-Ho | - |
dc.contributor.author | Kim, Do-Kywn | - |
dc.contributor.author | Jo, Young-Woo | - |
dc.contributor.author | Lee, Jun-Hyeok | - |
dc.contributor.author | Kim, Yong-Tae | - |
dc.contributor.author | Cristoloveanu, Sorin | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.date.accessioned | 2024-01-20T06:02:08Z | - |
dc.date.available | 2024-01-20T06:02:08Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/124925 | - |
dc.description.abstract | We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to 1070 degrees C, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of 800 degrees C exhibited best Hall measurement results; such as sheet resistance of 215 Omega/square, electron mobility of 1430 cm(2)/V.s, and two-dimensional electron gas (2DEG) density of 2.04 x 1013 /cm(2). The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of 0.2 mu m exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz. | - |
dc.language | English | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.title | Growth of AlN/GaN HEMT structure Using Indium-surfactant | - |
dc.type | Article | - |
dc.identifier.doi | 10.5573/JSTS.2015.15.5.490 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.5, pp.490 - 496 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 15 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 490 | - |
dc.citation.endPage | 496 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.identifier.kciid | ART002044041 | - |
dc.identifier.wosid | 000366061700009 | - |
dc.identifier.scopusid | 2-s2.0-84945949458 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | AlN/GaN heterostructure | - |
dc.subject.keywordAuthor | indium surfactant | - |
dc.subject.keywordAuthor | HEMT | - |
dc.subject.keywordAuthor | hall measurement | - |
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