Growth of AlN/GaN HEMT structure Using Indium-surfactant
- Authors
- Kim, Jeong-Gil; Won, Chul-Ho; Kim, Do-Kywn; Jo, Young-Woo; Lee, Jun-Hyeok; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee
- Issue Date
- 2015-10
- Publisher
- IEEK PUBLICATION CENTER
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.5, pp.490 - 496
- Abstract
- We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to 1070 degrees C, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of 800 degrees C exhibited best Hall measurement results; such as sheet resistance of 215 Omega/square, electron mobility of 1430 cm(2)/V.s, and two-dimensional electron gas (2DEG) density of 2.04 x 1013 /cm(2). The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of 0.2 mu m exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.
- Keywords
- AlN/GaN heterostructure; indium surfactant; HEMT; hall measurement
- ISSN
- 1598-1657
- URI
- https://pubs.kist.re.kr/handle/201004/124925
- DOI
- 10.5573/JSTS.2015.15.5.490
- Appears in Collections:
- KIST Article > 2015
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