Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SangHyeon | - |
dc.contributor.author | Geum, Dae-Myeong | - |
dc.contributor.author | Park, Min-Su | - |
dc.contributor.author | Kim, Chang Zoo | - |
dc.contributor.author | Choi, Won Jun | - |
dc.date.accessioned | 2024-01-20T06:02:20Z | - |
dc.date.available | 2024-01-20T06:02:20Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/124936 | - |
dc.description.abstract | In this work, we developed wafer bonding techniques to bond GaAs and Si wafers. Wafer bonding was carried out at room temperature without high temperature annealing processes. The bonded interface showed a low interface resistance of 8.8 x 10(-3) Omega cm(2). We also exploited the new bonding techniques to fabricate a GaAs solar cell on a Si substrate. The solar cell showed a high energy conversion efficiency (13.25%) even without an anti reflection coating. The performance of the fabricated GaAs/Si solar cell was comparable to that of a homogeneous GaAs solar cell grown on a GaAs substrate. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | EFFICIENCY | - |
dc.subject | DISLOCATIONS | - |
dc.subject | CONVERSION | - |
dc.title | GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.solmat.2015.06.021 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.141, pp.372 - 376 | - |
dc.citation.title | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.volume | 141 | - |
dc.citation.startPage | 372 | - |
dc.citation.endPage | 376 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000359504200046 | - |
dc.identifier.scopusid | 2-s2.0-84936860765 | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
dc.subject.keywordPlus | CONVERSION | - |
dc.subject.keywordAuthor | Wafer bonding | - |
dc.subject.keywordAuthor | GaAs on Si | - |
dc.subject.keywordAuthor | GaAs solar cell | - |
dc.subject.keywordAuthor | GaAs/Si | - |
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