Structural, electrical, and optical properties of Zn-In-Sn-O films for silicon heterojunction solar cells

Authors
Lee, SeunghunJi, Kwang-SunPark, HyominTark, Sung JuPark, SungeunLee, Jeong ChulKim, Won MokKang, YoonmookLee, Hae-SeokKim, Donghwan
Issue Date
2015-08-31
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.589, pp.233 - 237
Abstract
We investigated the structural, optical, and electrical properties of Zn-In-Sn-O (ZITO) films prepared by RF magnetron sputtering for silicon heterojunction solar cells. The effects of Zn addition on the properties of the as-grown films were examined. XRD patterns of the ZITO films deposited at room temperature showed a broad peak. The cross-sectional TEM image of ZITO films at low Zn levels exhibited a typical fine or nanostructure embedded in an amorphous phase. On the other hand, at higher Zn addition, the films exhibited a completely amorphous phase. The carrier concentration decreased with increasing Zn content. The lowest electrical resistivity of 5.5 x 10(-4) Omega cm was observed for a ZITO film with 4.83 Zn at.%. All ZITO films grown in this study showed transmittance of over 80% in the visible and near-infrared spectral range. The absorption was less than 5% in the visible region. (C) 2015 Elsevier B.V. All rights reserved.
Keywords
OXIDE THIN-FILMS; TRANSPARENT; OXIDE THIN-FILMS; TRANSPARENT; Zinc indium tin oxide; Magnetron sputtering; Transparent conducting oxide; Silicon solar cell
ISSN
0040-6090
URI
https://pubs.kist.re.kr/handle/201004/125107
DOI
10.1016/j.tsf.2015.05.025
Appears in Collections:
KIST Article > 2015
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