Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Min Kyu | - |
dc.contributor.author | Kim, Gun Hwan | - |
dc.contributor.author | Ju, Hyunsu | - |
dc.contributor.author | Lee, Jeon-Kook | - |
dc.contributor.author | Ryu, Han-Cheol | - |
dc.date.accessioned | 2024-01-20T06:31:35Z | - |
dc.date.available | 2024-01-20T06:31:35Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2015-08-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/125136 | - |
dc.description.abstract | Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 x 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MEMORY | - |
dc.title | The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4928249 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.107, no.5 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 107 | - |
dc.citation.number | 5 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000359375700042 | - |
dc.identifier.scopusid | 2-s2.0-84938801316 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | MnOx thin films | - |
dc.subject.keywordAuthor | Ti electrode | - |
dc.subject.keywordAuthor | Pt electrode | - |
dc.subject.keywordAuthor | interfacial layer effect | - |
dc.subject.keywordAuthor | crossbar array | - |
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